丝印：S47；Package：SOT89；40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capa

文件：676.63 Kbytes 页数：12 Pages

NEXPERIA

安世

40 V, 2 A NPN low VCEsat (BISS) transistor

文件：190.85 Kbytes 页数：12 Pages

PHI

飞利浦

40 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

功率三极管

YJ

益嘉源

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A SOT89

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A SOT89

Nexperia USA Inc.