功率三极管

YJ

益嘉源

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

文件：52.64 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

文件：460.84 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

文件：705.08 Kbytes 页数：14 Pages

NEXPERIA

安世