20 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector c

文件：119.51 Kbytes 页数：13 Pages

PHI

飞利浦

20 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector c

文件：186.07 Kbytes 页数：13 Pages

恩XP

丝印：N6；Package：SOT666；20 V, 2 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：299.66 Kbytes 页数：14 Pages

NEXPERIA

安世

20 V, 2 A NPN low VCEsat (BISS) transistor

文件：186.07 Kbytes 页数：13 Pages

PHI

飞利浦

PBSS4220V - 20 V, 2 A NPN low VCEsat (BISS) transistor

20 V, 2 A NPN low VCEsat (BISS) transistor - NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability: IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n·AEC-Q101 qualified;

Nexperia

安世

Package：SOT-563，SOT-666；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A SOT666

Nexperia USA Inc.