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PBSS4112PANP

Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1.1Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN.PNP/PNPcomplement:PBSS5112PAP. 1.2Featuresandbenefits •Verylowcolle

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4112PANP

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor;

General description\nNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\nNPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.Features and benefits\n• Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified

NXPNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS4112PANP

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n;

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.\n

NexperiaNexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4112PANP-Q

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor;

NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4112PAN-Q\n

NexperiaNexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4112PANP-Q

Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat transistor

1.Generaldescription NPN/PNPlowVCEsattransistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4112PANP_15

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

技术参数

  • Package name:

    DFN2020-6

  • Size (mm):

    2 x 2 x 0.65

  • Product status:

    Production

  • Polarity:

    NPN/PNP

  • Nr of transistors:

    2

  • Ptot [max] (mW):

    1040

  • VCEO [max] (V):

    120

  • IC [max] (A):

    1

  • VCEsat [max] (NPN) (mV):

    220

  • VCEsat [max] (PNP) (mV):

    -480

  • RCEsat@IC [max]; IC/IB =10 [typ] (mΩ):

    440

  • hFE [min]:

    240

  • fT [typ] (MHz):

    120

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
103048
全新原装正品/价格优惠/质量保障
询价
ADI/亚德诺
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
询价
NEXPERIA/安世
2447
SOT1118
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
恩XP
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
NEXPERIA/安世
23+
SOT1118
6000
原装正品假一罚百!可开增票!
询价
恩XP
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
询价
恩XP
23+
NA
6000
原装现货订货价格优势
询价
NEXPERIA/安世
22+
SOT1118
18000
原装正品
询价
恩XP
23+
N/A
6000
公司只做原装,可来电咨询
询价
恩XP
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
更多PBSS4112PANP供应商 更新时间2025-7-27 23:00:00