首页 >PBSS4112PANP>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
PBSS4112PANP | Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 1.1Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN.PNP/PNPcomplement:PBSS5112PAP. 1.2Featuresandbenefits •Verylowcolle | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
PBSS4112PANP | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor; General description\nNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\nNPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.Features and benefits\n• Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified | NXPNXP Semiconductors 恩智浦恩智浦半导体公司 | NXP | |
PBSS4112PANP | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n; NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.\n | NexperiaNexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | Nexperia | |
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor; NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4112PAN-Q\n | NexperiaNexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | Nexperia | ||
Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat transistor 1.Generaldescription NPN/PNPlowVCEsattransistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
技术参数
- Package name:
DFN2020-6
- Size (mm):
2 x 2 x 0.65
- Product status:
Production
- Polarity:
NPN/PNP
- Nr of transistors:
2
- Ptot [max] (mW):
1040
- VCEO [max] (V):
120
- IC [max] (A):
1
- VCEsat [max] (NPN) (mV):
220
- VCEsat [max] (PNP) (mV):
-480
- RCEsat@IC [max]; IC/IB =10 [typ] (mΩ):
440
- hFE [min]:
240
- fT [typ] (MHz):
120
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
103048 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
ADI/亚德诺 |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEXPERIA/安世 |
2447 |
SOT1118 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT1118 |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
恩XP |
21+ |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | |||
恩XP |
23+ |
NA |
6000 |
原装现货订货价格优势 |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT1118 |
18000 |
原装正品 |
询价 | ||
恩XP |
23+ |
N/A |
6000 |
公司只做原装,可来电咨询 |
询价 | ||
恩XP |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 |
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