PBSS4112PANP中文资料安世数据手册PDF规格书

1.1 General description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.

1.2 Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High efficiency due to less heat generation

• AEC-Q101 qualified

1.3 Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)