丝印：BN；Package：SOT23；30 V, 2.4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capability IC and ICM

文件：280.35 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 2.4 A PNP low VCEsat transistor

Nexperia

安世

30 V, 4.2 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required

文件：741 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 4.4 A PNP low VCEsat (BISS) transistor

文件：199.4 Kbytes 页数：15 Pages

PHI

飞利浦