30 V, 3.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. Features ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current

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恩XP

丝印：ZF；Package：SC-74；30 V, 3.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

文件：272.15 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 3.5 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. „ Low collector-emitter saturation voltage VCEsat\n„ Optimized switching time\n„ High collector current capability IC and ICM\n„ High collector current gain (hFE) at high IC\n„ High energy efficiency due to less heat generation\n„ AEC-Q101 qualified\n„ Smaller required Printed-Circuit Board (PCB) ar;

恩XP

恩智浦

30 V, 3.5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD • AEC-Q101 qualified\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• Smaller required PCB area than for conventional;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 3.5A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司