100 V, 4.5 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS306PX-Q

Nexperia

安世

100 V, 5.1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：308.19 Kbytes 页数：15 Pages

NEXPERIA

安世

100 V, 5.1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：294.41 Kbytes 页数：14 Pages

NEXPERIA

安世

Commercial miniature 6 mm square cermet trimmer potentiometer

文件：228.98 Kbytes 页数：2 Pages

CTS

西迪斯

An IP68 Military USB Hub

文件：383.15 Kbytes 页数：3 Pages

ENERCON

16-Channel CMOS Analog Multiplexer

文件：272.58 Kbytes 页数：16 Pages

Maxwell