30 V, 5.1 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS303NX-Q

Nexperia

安世

30 V, 5.3 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.51 Kbytes 页数：15 Pages

NEXPERIA

安世

30 V, 5.3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：273.43 Kbytes 页数：14 Pages

NEXPERIA

安世

SCREW TYPE SERIES

文件：310.12 Kbytes 页数：1 Pages

DBLECTRO

Miniature 3 mm surface mount chip-type cermet trimmer potentiometer

文件：163.09 Kbytes 页数：2 Pages

CTS

西迪斯

Clamp Meter

文件：1.10789 Mbytes 页数：24 Pages

FLUKE

福禄克