20 V, 5.3 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS302PX-Q

Nexperia

安世

20 V, 5.8 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

文件：102.57 Kbytes 页数：14 Pages

PHI

飞利浦

20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector cur

文件：271.98 Kbytes 页数：13 Pages

NEXPERIA

安世

20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC

文件：271.57 Kbytes 页数：13 Pages

NEXPERIA

安世