PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityI

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PBSS302ND

丝印：C7；Package：SC-74；40 V, 4 A NPN low VCEsat (BISS) transistor

1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor; • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS302PD.\n

PBSS302ND-Q

40 V, 4 A NPN low VCEsat transistor; • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n

PBSS302ND,115

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A 6TSOP

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PBSS302NDH

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A 6TSOP

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