12 V, 5.3 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS301PX-Q

Nexperia

安世

12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.12 Kbytes 页数：15 Pages

NEXPERIA

安世

SCREW TYPE SERIES

文件：369.23 Kbytes 页数：1 Pages

DBLECTRO

INTERCONNECTS 2,54 Grid (0,46 dia.) Pins, Straight and Right Angle Single Row

文件：315.73 Kbytes 页数：1 Pages

MILL-MAX

ECHOTEL짰NON-CONTACTULTRASOUND

文件：768.65 Kbytes 页数：8 Pages

MAGNETROL

磁控国际