20 V, 4 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

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PHI

飞利浦

丝印：C6；Package：SC-74；20 V, 4 A NPN low VCEsat (BISS) transistor

1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.2 Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltag

文件：250.2 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 4 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS301PD. • Very low collector-emitter saturation resistance\n• Ultra low collector-emitter saturation voltage\n• 4 A continuous collector current\n• Up to 15 A peak current\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 4A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司