丝印：1G；Package：HUSON6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

文件：1.39791 Mbytes 页数：20 Pages

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安世安世半导体(中国)有限公司

丝印：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic packag

文件：1.44438 Mbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. Fea

文件：839.21 Kbytes 页数：20 Pages

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40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors;

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Package：6-UFDFN 裸露焊盘；包装：管件 类别：分立半导体产品 晶体管 - 特殊用途 描述：TRANS PNP N-CH SOT1118

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：6-UFDFN 裸露焊盘；包装：管件 类别：分立半导体产品 晶体管 - 特殊用途 描述：TRANS PNP/N CH 40V 1.8A 6HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司