NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

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恩XP

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ

恩XP

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 plastic package. • 800 mA output current capability\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• +-10 pct resistor ratio tolerance\n• AEC-Q101 qualified;

Nexperia

安世

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBRP123YT-Q • 600 mA output current capability\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• ± 10 % resistor ratio tolerance\n• Qualified according to AEC-Q101 ;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW TO236AB

Nexperia USA Inc.