500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector cur

文件：97.44 Kbytes 页数：12 Pages

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丝印：LL；Package：SOT23；500 V, 150 mA PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

文件：243.06 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LL；Package：SOT23；500 V, 150 mA PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current ga

文件：242.44 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 150 mA PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

文件：243.06 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PMBTA45. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

500 V, 150 mA PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 500V 0.15A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司