丝印：LL；Package：SOT23；500 V, 150 mA PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current ga

文件：242.44 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 150 mA PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

文件：243.06 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 150 mA PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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安世

500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor

文件：459.5 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Bus Target Interface Chip

文件：208.92 Kbytes 页数：2 Pages

PLX

Bus Target Interface Chip

文件：208.92 Kbytes 页数：2 Pages

PLX