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IXFH80N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH80N10Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXFT80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXYS

IXYS Corporation

IXFT80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXTA80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

IXTA80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

JCS80N10CF-O-C-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

供应商型号品牌批号封装库存备注价格
ST
23+
T0-220
16900
正规渠道,只有原装!
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ST
21+
T0-220
23480
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ST
25+
T0-220
16900
原装,请咨询
询价
24+
8866
询价
ST
23+
TO-220
18689
询价
ST/意法
23+
TO-220
68400
原厂授权一级代理,专业海外优势订货,价格优势、品种
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ST
23+
TO-220
3000
全新原装
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ST/进口原
17+
TO-220
6200
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ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
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ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
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更多P80N10T供应商 更新时间2025-5-20 16:30:00