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P7N60DD2

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:344.54 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:352.36 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:352.34 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:352.34 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:344.56 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:344.54 Kbytes 页数:9 Pages

SILAN

士兰微

SVSP7N60DD2TR

丝印:P7N60DD2;Package:TO-252-2L;7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

文件:344.54 Kbytes 页数:9 Pages

SILAN

士兰微

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO-220
68212
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
23+
TO220-3
16900
正规渠道,只有原装!
询价
ST
25+
TO220-3
16900
原装,请咨询
询价
ST
2511
TO220-3
16900
询价
ST
23+24
TO220F
17228
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
S
TO-220
22+
6000
十年配单,只做原装
询价
S
23+
TO-220
6000
原装正品,支持实单
询价
ST
2022+
30
全新原装 货期两周
询价
ST
25+
TOP220
4500
全新原装、诚信经营、公司现货销售!
询价
TO-220
8425
一级代理 原装正品假一罚十价格优势长期供货
询价
更多P7N60DD2供应商 更新时间2025-10-5 11:10:00