HARD DISK DRIVE service manual

文件：596.6 Kbytes 页数：36 Pages

Samsung

三星

丝印：p80；Package：SOT765-1；Low-power dual D-type flip-flop; positive-edge trigger

1. General description The 74AUP2G80 provides the dual positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. The input pin D must be stable one setup time prior to the LOW-to-HIGH clock transition

文件：279.64 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：p80；Package：SOT833-1；Low-power dual D-type flip-flop; positive-edge trigger

1. General description The 74AUP2G80 provides the dual positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. The input pin D must be stable one setup time prior to the LOW-to-HIGH clock transition

文件：279.64 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P80C；Package：SOD-323；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.40002 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P80JC；Package：SMC；Surface Mount Rectifiers

文件：537.31 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：P80KC；Package：SMC；Surface Mount Rectifiers

文件：537.31 Kbytes 页数：4 Pages

BILIN

银河微电

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：609.44 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

文件：37.1 Kbytes 页数：2 Pages

SYNSEMI

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

文件：37.1 Kbytes 页数：2 Pages

SYNSEMI

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

文件：37.1 Kbytes 页数：2 Pages

SYNSEMI