N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：206.8 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：P7NA60；Package：TO-220AB；600V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@3.5A

文件：487.93 Kbytes 页数：8 Pages

PANJIT

強茂

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：206.8 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

600V N-Channel MOSFET

文件：475.89 Kbytes 页数：9 Pages

PANJIT

強茂

600V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@3.5A

文件：487.93 Kbytes 页数：8 Pages

PANJIT

強茂

600V N-Channel MOSFET

文件：475.89 Kbytes 页数：9 Pages

PANJIT

強茂