大功率晶体管

GenesisMicro

晶新微电子

Silicon Rectifier Diodes

Features • Package smaller than industry standard • Low forward voltage drop • Reduced Rth: Version P2000xTL • High forward surge current • Compliant to RoHS, REACH, Conflict Minerals 1) Typical Application 50/60 Hz Mains Rectification, Power Supplies, Polarity Protection

文件：97.49 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Standard silicon rectifier diodes

Forward Current : 20 A Reverse Voltage : 50 to 1200 V Features • Max. solder temperature : 260 °C • Plastic material has UL classification 94V-0

文件：254.14 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

文件：1.87705 Mbytes 页数：212 Pages

TECCOR

Standard silicon rectifier diodes

Forward Current : 20 A Reverse Voltage : 50 to 1200 V Features • Max. solder temperature : 260 °C • Plastic material has UL classification 94V-0

文件：254.14 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

Silicon Rectifier Diodes

Features • Package smaller than industry standard • Low forward voltage drop • Reduced Rth: Version P2000xTL • High forward surge current • Compliant to RoHS, REACH, Conflict Minerals 1) Typical Application 50/60 Hz Mains Rectification, Power Supplies, Polarity Protection

文件：97.49 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Silicon Rectifier Diodes

Features • Package smaller than industry standard • Low forward voltage drop • Reduced Rth: Version P2000xTL • High forward surge current • Compliant to RoHS, REACH, Conflict Minerals 1) Typical Application 50/60 Hz Mains Rectification, Power Supplies, Polarity Protection

文件：97.49 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Standard silicon rectifier diodes

Forward Current : 20 A Reverse Voltage : 50 to 1200 V Features • Max. solder temperature : 260 °C • Plastic material has UL classification 94V-0

文件：254.14 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

文件：893.61 Kbytes 页数：12 Pages

INFINEON

英飞凌

Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

文件：893.61 Kbytes 页数：12 Pages

INFINEON

英飞凌