P2000D

Silicon Rectifier Diodes

Features •Packagesmallerthanindustrystandard •Lowforwardvoltagedrop •ReducedRth:VersionP2000xTL •Highforwardsurgecurrent •ComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplication 50/60HzMainsRectification,PowerSupplies,PolarityProtection

P2000D

Standard silicon rectifier diodes

ForwardCurrent:20A ReverseVoltage:50to1200V Features •Max.soldertemperature:260°C •PlasticmaterialhasULclassification94V-0

P2000D

Standard silicon rectifier diodes

P2000D

Standard Recovery Rectifier Diodes

P2000DL45X168

Druckkontaktierter IGBT Press Pack IGBT

Features PressPackIGBTwithintegratedFreewheelingDiode LongtermShortonFailbehavior Highdynamicrobustness Highshort-circuitcapability LowVCEsat TrenchIGBT3

P2000DM

Marking：20M；Package：SOD-123FL；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

P2000DTL

Standard Recovery Rectifier Diodes

P2000DTL

Silicon Rectifier Diodes

P2000DE45X168HPSA1

包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PRESS PACK IGBT

P2000DL45X168APTHPSA1

Package：DO-200AE；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PRESS PACK IGBT BG-P16826K-1