Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

文件：893.61 Kbytes 页数：12 Pages

INFINEON

英飞凌

4500 V、2000 A 压接式 IGBT

\n优势:\n• Full long term short-on-fail\n• Explosion proofed housing\n• Highest power cycling capability\n• Double side cooling\n• Wide range of clamping force;

Infineon

英飞凌

Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

文件：893.61 Kbytes 页数：12 Pages

INFINEON

英飞凌

Package：DO-200AE；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PRESS PACK IGBT BG-P16826K-1

INFINEON

英飞凌

Package：TO-200AF；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：PRESS PACK IGBT

INFINEON

英飞凌