DDA114YH-7

Marking：P14；Package：SOT563；PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryNPNTypesAvailable(DDC) -Built-InBiasingResistors -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

DDTA114YE-7-F

Marking：P14；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryNPNTypesAvailable(DDTC) -Built-InBiasingResistors,R1R2 -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFreeGreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

NC7SP14P5X

Marking：P14；Package：SC-88A；TinyLogic ULP-A Inverter with Schmitt-Trigger Input

TheNC7SP14isasingleinverterwithSchmitt−TriggerInputintiny footprintpackages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •2.6nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSup

NC7WP14P6X

Marking：P14；Package：SC-88；TinyLogic ULP-A Dual Inverter with Schmitt-Trigger Input

TheNC7WP14isadualinverterwithSchmitt−triggerinputintiny footprintpackages.ThedeviceisdesignedtooperateforVCC=0.9V to3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •3.0nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupp

LDP2010DT1G

Marking：P14；Package：DFN2020-6D；20V P-Channel Enhancement-Mode MOSFET

NC7SP14P5X

Marking：P14；Package：MAA05A；TinyLogic ULP Inverter with Schmitt Trigger Input

NC7WP14P6X

Marking：P14；Package：MAA06A；TinyLogic ULP Dual Inverter

PS14

Marking：P14；Package：SOD-123；SURFACE MOUNTSCHOTTKY RECTIFIERS

SVSP14N65FJDD2

Marking：P14N65FJD；Package：TO-220FJD-3L；14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SVSP14N65FJDD2

Marking：P14N65FJD；Package：TO-220FJD-3L；14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper