Spring Probe Plunger

Description Spring Probe, Plunger, Point, 3A, 33,3mm

文件：189.39 Kbytes 页数：1 Pages

MULTICOMP

易络盟

100 W DC-DC Converter P100B-Series

● Wide 4:1 input range ● Efficiency up to 93 ● Adjustable output voltage ● Remote control on / off ● In/Out isolation 2250 VDC ● Input under voltage protection ● Continuous short circuit protection ● Over current protection ● Over voltage protection ● Over temperature protection ● Five

文件：1.20857 Mbytes 页数：7 Pages

HY-LINE

100 W DC-DC Converter P100B-Series

● Wide 4:1 input range ● Efficiency up to 93 ● Adjustable output voltage ● Remote control on / off ● In/Out isolation 2250 VDC ● Input under voltage protection ● Continuous short circuit protection ● Over current protection ● Over voltage protection ● Over temperature protection ● Five

文件：1.20857 Mbytes 页数：7 Pages

HY-LINE

100 W DC-DC Converter P100B-Series

● Wide 4:1 input range ● Efficiency up to 93 ● Adjustable output voltage ● Remote control on / off ● In/Out isolation 2250 VDC ● Input under voltage protection ● Continuous short circuit protection ● Over current protection ● Over voltage protection ● Over temperature protection ● Five

文件：1.20857 Mbytes 页数：7 Pages

HY-LINE

100 W DC-DC Converter P100B-Series

● Wide 4:1 input range ● Efficiency up to 93 ● Adjustable output voltage ● Remote control on / off ● In/Out isolation 2250 VDC ● Input under voltage protection ● Continuous short circuit protection ● Over current protection ● Over voltage protection ● Over temperature protection ● Five

文件：1.20857 Mbytes 页数：7 Pages

HY-LINE

100 W DC-DC Converter P100B-Series

● Wide 4:1 input range ● Efficiency up to 93 ● Adjustable output voltage ● Remote control on / off ● In/Out isolation 2250 VDC ● Input under voltage protection ● Continuous short circuit protection ● Over current protection ● Over voltage protection ● Over temperature protection ● Five

文件：1.20857 Mbytes 页数：7 Pages

HY-LINE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.32 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.007Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.92 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：333.24 Kbytes 页数：2 Pages

ISC

无锡固电