isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：333.24 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：897.02 Kbytes 页数：4 Pages

SHINDENGEN

MOSFET

Shindengen

新电元

Power MOSFETs 120V, 100A, N-channel

文件：1.68391 Mbytes 页数：7 Pages

SHINDENGEN

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.007Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.92 Kbytes 页数：2 Pages

ISC

无锡固电