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ATtiny861-ESXZ

8-bitMicrocontrollerwith2/4/8KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY861V

8-bitMicrocontrollerwith2/4/8KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY861V

8-bitMicrocontrollerwith2/4/8KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

B861

SiliconPNPTripleDiffused

Application LowfrequencypoweramplifiercolorTVverticaldeflectionoutput complementarypairwith2SD1138

HitachiHitachi, Ltd.

日立公司

BD861

NPNSILICONDARLINGTONTRANSISTORS

SIEMENS

Siemens Ltd

BF861

N-channeljunctionFETs

DESCRIPTION N-channelsymmetricaljunctionfieldeffecttransistorsinaSOT23package. FEATURES •Hightransferadmittance •Lowinputcapacitance •Lowfeedbackcapacitance •Lownoise. APPLICATIONS •PreamplifiersforAMtunersincarradios.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF861A

N-channeljunctionFETs

DESCRIPTION N-channelsymmetricaljunctionfieldeffecttransistorsinaSOT23package. FEATURES •Hightransferadmittance •Lowinputcapacitance •Lowfeedbackcapacitance •Lownoise. APPLICATIONS •PreamplifiersforAMtunersincarradios.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF861A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF861B

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF861B

N-channeljunctionFETs

DESCRIPTION N-channelsymmetricaljunctionfieldeffecttransistorsinaSOT23package. FEATURES •Hightransferadmittance •Lowinputcapacitance •Lowfeedbackcapacitance •Lownoise. APPLICATIONS •PreamplifiersforAMtunersincarradios.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF861C

N-channeljunctionFETs

DESCRIPTION N-channelsymmetricaljunctionfieldeffecttransistorsinaSOT23package. FEATURES •Hightransferadmittance •Lowinputcapacitance •Lowfeedbackcapacitance •Lownoise. APPLICATIONS •PreamplifiersforAMtunersincarradios.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF861C

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF861

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinanSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •SourceonundersideeliminatesDCisolator

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLF861A

UHFPOWERLDMOSTRANSISTOR

DESCRIPTION: TheASIBLF861AiaaSiliconN-channelenhancementmodelateralD-MOSpush-pulltransistor. FEATURES: •Internalinput-outputmatching •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor, Inc

BLF861A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLF861A

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Designedtowithstandabruptloadmismatch

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BLF861A

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Designedtowithstandabruptloadmismatch

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLV861

UHFlinearpush-pullpowertransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT289A4-leadrectangularflangepackage,withaceramiccap. FEATURES •Doublestageinternalinputandoutputmatching networksforanoptimumwidebandcapabi

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BLV861

UHFlinearpush-pullpowertransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT289A4-leadrectangularflangepackage,withaceramiccap. FEATURES •Doublestageinternalinputandoutputmatching networksforanoptimumwidebandcapabi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BS-A861RD

SINGLEDIGITLEDDISPLAYS

ETC1List of Unclassifed Manufacturers

未分类制造商

详细参数

  • 型号:

    OPA861ID

  • 功能描述:

    跨导放大器 Wide Bandwidth Oper Transconductance

  • RoHS:

  • 制造商:

    Texas Instruments

  • 通道数量:

    1

  • 封装/箱体:

    SOIC-14

  • 输入补偿电压:

    40 mV at +/- 5 V

  • 电源电压-最大:

    +/- 5 V

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TI
22+
SOIC-8
65568
代理授权直销,原装现货,长期稳定供应
询价
TI(德州仪器)
23+
SOP8
959
只做原装,提供一站式配单服务,代工代料。BOM配单
询价
TI/TEXAS
23+
原厂封装
8931
询价
TI
2017+
SOP-8
45288
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
TexasInstruments
8-SOIC
8500
绝对原装正品!假一罚十!放大器专业分销商!
询价
TI
16+
SOIC
10000
原装正品
询价
TI/德州仪器
18+
SOIC
8257
向鸿专营TI ADI,代理渠道可订货
询价
TI
20+
SOIC
53650
TI原装主营-可开原型号增税票
询价
TI
21+
SOIC-8
35200
一级代理/放心采购
询价
TI
16+
SOIC
10000
原装正品
询价
更多OPA861ID供应商 更新时间2024-5-1 9:00:00