Package：轴向；包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RES 910 OHM 5% 2W AXIAL

OHMITE

Package：轴向；包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RES 910 OHM 5% 2W AXIAL

OHMITE

150 V, 1 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC

文件：895.97 Kbytes 页数：12 Pages

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150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115T. 1.2 Features n High voltage n Low collector-emitter saturation voltage VCEsat n High collec

文件：239.61 Kbytes 页数：13 Pages

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安世