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A1N100TW

FORMULAULMoldedCaseCircuitBreakers

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IXTA1N100

HighVoltageMOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb

IXYS

IXYS Corporation

IXTA1N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA1N100P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications

IXYS

IXYS Corporation

IXTH1N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTP1N100

HighVoltageMOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb

IXYS

IXYS Corporation

IXTP1N100P

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications

IXYS

IXYS Corporation

详细参数

  • 型号:

    OM1N100ST

  • 功能描述:

    POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE

供应商型号品牌批号封装库存备注价格
OEG
2023+环保现货
专业继电器
6800
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
MITSUBISHI
19+
Module
224
原装正品实单来谈
询价
ALEPH
23+
DIP-4p
46800
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ph
23+
82
询价
MOT
23+
NA
12000
全新原装假一赔十
询价
PHSSEMICONDUCTOR
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ADI
22+
N/A
60000
专注配单,只做原装现货
询价
ADI
23+
N/A
8000
只做原装现货
询价
PHI
19+
SIP
1000
进口原装现货假一赔万力挺实单
询价
PHI
23+
SIP
89630
当天发货全新原装现货
询价
更多OM1N100ST供应商 更新时间2024-3-26 15:06:00