开关电源芯片

OB

昂宝电子

40 V, 500 mA NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.96 Kbytes 页数：12 Pages

NEXPERIA

安世

40 V low V NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors.

文件：63.63 Kbytes 页数：8 Pages

PHI

飞利浦

QUAD DARLINGTON POWER DRIVER

Combining AND logic gates and inverting high-current bipolar outputs, the UDN2540B and A2540SLB quad Darlington power drivers provide interface between low-level signal-processing circuits and power loads totaling 360 W. Each of the four independent outputs can sink up to 1.8 A in the on state wit

文件：143.17 Kbytes 页数：8 Pages

ALLEGRO

Threaded Smooth Bore Bushings

文件：154.07 Kbytes 页数：1 Pages

Heyco

60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

文件：367.62 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商