丝印：OA；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

文件：482.95 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：OA；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

文件：482.95 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.2169 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21861 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21839 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21955 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Inductor

文件：1.20392 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：OA；Package：SMD；This specification applies to SMD Unshielded Power Inductors

文件：755.43 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：OA；Package：SMD；This specification applies to SMD Unshielded Power Inductors

文件：755.43 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：OA；Package：DFN1109-6L；CMOS High Gain GPS LNA

文件：915.91 Kbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司