丝印：OA；Package：VSON(DLE)；CDC6Cx Low Power LVCMOS Output BAW Oscillator

1 Features • LVCMOS output oscillator supporting frequency range from 250kHz to 200MHz • Total frequency stability (inclusive of all factors and including 10 years aging): – DLY: ±50ppm – DLX: ±25ppm – DLF: ±25ppm – DLE: ±25ppm • Supply voltage supports 1.8V to 3.3V ±10%. • Very low

文件：5.60935 Mbytes 页数：90 Pages

TI

德州仪器

丝印：OA；Package：VSON(DLF)；CDC6Cx Low Power LVCMOS Output BAW Oscillator

1 Features • LVCMOS output oscillator supporting frequency range from 250kHz to 200MHz • Total frequency stability (inclusive of all factors and including 10 years aging): – DLY: ±50ppm – DLX: ±25ppm – DLF: ±25ppm – DLE: ±25ppm • Supply voltage supports 1.8V to 3.3V ±10%. • Very low

文件：5.60935 Mbytes 页数：90 Pages

TI

德州仪器

丝印：OA；Package：VSON(DLX)；CDC6Cx Low Power LVCMOS Output BAW Oscillator

1 Features • LVCMOS output oscillator supporting frequency range from 250kHz to 200MHz • Total frequency stability (inclusive of all factors and including 10 years aging): – DLY: ±50ppm – DLX: ±25ppm – DLF: ±25ppm – DLE: ±25ppm • Supply voltage supports 1.8V to 3.3V ±10%. • Very low

文件：5.60935 Mbytes 页数：90 Pages

TI

德州仪器

丝印：OA；Package：VSON(DLY)；CDC6Cx Low Power LVCMOS Output BAW Oscillator

1 Features • LVCMOS output oscillator supporting frequency range from 250kHz to 200MHz • Total frequency stability (inclusive of all factors and including 10 years aging): – DLY: ±50ppm – DLX: ±25ppm – DLF: ±25ppm – DLE: ±25ppm • Supply voltage supports 1.8V to 3.3V ±10%. • Very low

文件：5.60935 Mbytes 页数：90 Pages

TI

德州仪器

丝印：OA；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

文件：482.95 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：OA；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

文件：482.95 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.2169 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21861 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21839 Mbytes 页数：50 Pages

TI

德州仪器

丝印：OA；Package：X2SON；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21955 Mbytes 页数：50 Pages

TI

德州仪器