DMC2025UFDB-13

Marking：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontro

DMC2025UFDB-7

Marking：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontro

DMC2025UFDBQ-13

Marking：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMC2025UFDBQissuitableforautomotiveapplications re

DMC2025UFDBQ-7

Marking：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCBFootprintof4mm2 LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaximumHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMC2025UFDBQissuitableforautomotiveapplications re

PMBS3904

Marking：O4；Package：SOT23；NPN general purpose transistor

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Generalpurposeswitchingandamplification,e.g.telephonyandprofessionalcommunicationequipment. DESCRIPTION NPNtransistorinaplasticSOT23package.PNPcomplement:PMBS3906.

PMBS3904-Q

Marking：O4；Package：SOT23；40 V, 100 mA NPN general-purpose transistor

1.Generaldescription NPNtransistorinasmallSOT23(SC-70)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PMBS3906 2.Featuresandbenefits •Lowcurrent(max.100mA) •Lowvoltage(max.40V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveappli

RBR2LB60B

Marking：O4；Package：DO-214AA；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype LowVF ●Application Generalrectification

OPA4140AID

Marking：O4140A；Package：SOIC；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1Features •Very-lowoffsetdrift:1μV/°Cmaximum •Very-lowoffset:120μV •Lowinputbiascurrent:10pAmaximum •Very-low1/fnoise:250nVPP,0.1Hzto10Hz •Lownoise:5.1nV/√Hz •Slewrate:20V/μs •Lowsupplycurrent:2mAmaximum •InputvoltagerangeincludesV–supply •

OPA4140AIDR

Marking：O4140A；Package：SOIC；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1Features •Very-lowoffsetdrift:1μV/°Cmaximum •Very-lowoffset:120μV •Lowinputbiascurrent:10pAmaximum •Very-low1/fnoise:250nVPP,0.1Hzto10Hz •Lownoise:5.1nV/√Hz •Slewrate:20V/μs •Lowsupplycurrent:2mAmaximum •InputvoltagerangeincludesV–supply •

OPA4140AIPW

Marking：O4140A；Package：TSSOP；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1Features •Very-lowoffsetdrift:1μV/°Cmaximum •Very-lowoffset:120μV •Lowinputbiascurrent:10pAmaximum •Very-low1/fnoise:250nVPP,0.1Hzto10Hz •Lownoise:5.1nV/√Hz •Slewrate:20V/μs •Lowsupplycurrent:2mAmaximum •InputvoltagerangeincludesV–supply •