丝印：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change contro

文件：602.71 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change contro

文件：602.71 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications re

文件：650.33 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：O4；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UFDBQ is suitable for automotive applications re

文件：650.33 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：O4；Package：SOT23；NPN general purpose transistor

FEATURES •Low current (max. 100 mA) •Low voltage (max. 40 V). APPLICATIONS •General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906.

文件：335.67 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：O4；Package：SOT23；40 V, 100 mA NPN general-purpose transistor

1. General description NPN transistor in a small SOT23 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBS3906 2. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 40 V) • Qualified according to AEC-Q101 and recommended for use in automotive appli

文件：188.77 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：O4；Package：DO-214AA；Schottky Barrier Diode

●Features High reliability Small power mold type Low VF ●Application General rectification

文件：2.9345 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：O4140A；Package：SOIC；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：2.3877 Mbytes 页数：49 Pages

TI

德州仪器

丝印：O4140A；Package：SOIC(D)；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：3.02523 Mbytes 页数：56 Pages

TI

德州仪器

丝印：O4140A；Package：SOIC(D)；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：3.02523 Mbytes 页数：56 Pages

TI

德州仪器