StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

丝印：DC；Package：X2DFNW2；Zener Protection Diode

Features • Very Low Leakage 1 nA • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capabl

文件：177.71 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Zener Protection Diode

The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection. They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events. This device provides a single channel of bidirectional protection in an, ultra−compact

文件：159.91 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Zener Protection Diode

The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection. They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events. This device provides a single channel of bidirectional protection in an, ultra−compact

文件：159.91 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Zener Protection Diode

The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection. They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events. This device provides a single channel of bidirectional protection in an, ultra−compact

文件：159.91 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Zener Protection Diode

The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection. They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events. This device provides a single channel of bidirectional protection in an, ultra−compact

文件：159.91 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Zener Protection Diode

The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection. They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events. This device provides a single channel of bidirectional protection in an, ultra−compact

文件：159.91 Kbytes 页数：4 Pages

ONSEMI

安森美半导体