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NXH80B120L2Q0中文资料功率集成模块，双升压，1200 V，40 A，IGBT + 1200 V，30 A 硅二极管数据手册ONSEMI规格书
NXH80B120L2Q0规格书详情
描述 Description
The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 30A/1200V silicon diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
特性 Features
• IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 u\u0002J
• Fast IGBT with low VCE(SAT) for high efficiency
• 25 A / 1600 V Bypass and Anti−parallel Diodes
• Low VF bypass diodes for excellent efficiency in bypass mode
• Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
• Si Diode for moderate speed switching
• Solderable Pins
• Easy mounting
• Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
• Thermistor
应用 Application
• Solar Inverter Boost Stage
• Solar Inverter
• UPS
技术参数
- 制造商编号
：NXH80B120L2Q0
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Configuration
：Dual Boost - Full Silicon
- VBR Max (V)
：1200
- Rated Current (A)
：40
- VCE(sat) Typ (V)
：2.1
- VF Typ (V)
：2.5
- Application
：Industrial
- Package Type
：Q0
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
24+ |
NA |
25000 |
ON全系列可订货 |
询价 | ||
ON Semiconductor |
23+ |
20PIM/Q0PACK (55x32.5) |
8000 |
只做原装现货 |
询价 | ||
onsemi |
两年内 |
NA |
24 |
实单价格可谈 |
询价 | ||
ON Semiconductor |
22+ |
20PIM/Q0PACK (55x32.5) |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
onsemi(安森美) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
