NXH50M65L4Q1中文资料IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode数据手册ONSEMI规格书

描述 Description

The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.

特性 Features

• Fast switching FieldStop 4 Trench IGBTs with low VCE(SAT) and low switching losses
• Improved efficiency and higher power density
• Module solution
• Higher power density and reliability than with discrete components
• Three level H6.5 topology
• Reduces size of common-mode choke compared with two level topologies
• Low inductive layout in module
• Lower EMI than with discrete solutions
• Solder pins

应用 Application

• DC-AC Conversion
• Residential Solar Inverters (Single Phase Power)
• UPS (Single Phase Power)
• Energy Storage Systems (Single Phase Power)

简介

NXH50M65L4Q1属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH50M65L4Q1晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。