NXH300B100H4Q2F2中文资料硅/碳化硅模块，三通道飞行电容器升压1000V 100A IGBT，1200V 30A碳化硅二极管数据手册ONSEMI规格书

描述 Description

The NXH300B100H4Q2 is a three channel flying capacitor boost module. Each channel contains two 1000 V, 100 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

特性 Features

• Module with low thermal impedance baseplate
• Easy module mounting. Higher output power
• Solder and press-fit options
• Flexibility to support different manufacturing processes
• 1000V low VCE(SAT) fast switching IGBTs and 1200V SiC diode optimized combination for flying capacitor boost stage
• Excellent efficiency and thermal losses. Higher output power than with 1200V IGBT solutions

应用 Application

• MPPT Boost Stage
• 1500V Decentralized Utility-Scale Solar Inverter
• Energy Storage Systems

简介

NXH300B100H4Q2F2属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH300B100H4Q2F2晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。