NXH350N100H4Q2F2P1G数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 350 A, 1000 V IGBTsfor the outer IGBTs and 400 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching.An on-board thermistor is included.

特性 Features

• Module with low thermal impedance baseplate
• Easy module mounting. Higher output power
• Solder and press-fit options
• Flexibility to support different manufacturing processes
• 1000V low VCE(SAT) IGBTs and 1200V SiC diode optimized combination for DC-AC conversion
• Excellent efficiency and thermal losses under normal and reactive power conditions.Higher output power than with 1200V IGBT solutions

应用 Application

• DC-AC Conversion in 1500V system
• 1500V Decentralized Utility Solar Inverters
• 1500V Energy Storage Systems

简介

NXH350N100H4Q2F2P1G属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH350N100H4Q2F2P1G晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。