Q0 - Dual Boost Power Module

文件：267.17 Kbytes 页数：10 Pages

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安森美半导体

丝印：NXH80B120L2Q0SG；Package：Q0BOOST；Q0 - Dual Boost Power Module

文件：267.17 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NXH80B120L2Q0SNG；Package：Q0BOOST；Q0 - Dual Boost Power Module

文件：267.17 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

功率集成模块，双升压，1200 V，40 A，IGBT + 1200 V，30 A 硅二极管

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 30A/1200V silicon diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is i • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 u\u0002J\n• Fast IGBT with low VCE(SAT) for high efficiency\n• 25 A / 1600 V Bypass and Anti−parallel Diodes\n• Low VF bypass diodes for excellent efficiency in bypass mode\n• Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A\n• Si Diode for mode;

ONSEMI

安森美半导体