Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C478L；Package：DFN8；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

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安森美半导体

丝印：478LWF；Package：DFN8；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C478N；Package：DFN8；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

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安森美半导体

丝印：478NWF；Package：DFN8；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

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安森美半导体

双 N 沟道功率 MOSFET 40 V，27 A，17.0 mΩ

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for automotive applications\n• NVMFD5C478NWF − Wettable Flanks Product\n• Enhanced Optical Inspection\n• RoHS Compliant;

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安森美半导体