丝印：V040N60S5F；Package：TO-247-3LD；MOSFET ??Single N-Channel, SUPERFET V, FRFET 600 V, 40 m, 59 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：797.53 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 59 A, 40 mΩ, TO-247

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits • Ultra Low Gate Charge (Typ. Qg = 108 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching loss and higher system reliability\n• 650 V @ TJ = 150°C\n• Typ. RDS(on) = 32.8 ;

ONSEMI

安森美半导体

TO-247

ON

上传：深圳权泰科技有限公司

DFN-8

ON

上传：深圳庞田科技有限公司

DFN

ON

上传：深圳市粤骏腾电子科技有限公司