丝印：V260N65S3；Package：DPAK3；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 260 m, 12 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, DPAK

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swi • Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Gull-wings to improve Board Level Reliability results\n• RoHS Compliant\n• Automotive Qualified;

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：416.68 Kbytes 页数：10 Pages

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