NVD260N65S3

丝印：V260N65S3；Package：DPAK3；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 260 m, 12 A

Features •UltraLowGateCharge&LowEffectiveOutputCapacitance •LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

FCB260N65S3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCB260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive

FCD260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive

FCD260N65S3

iscN-ChannelMOSFETTransistor

FCP260N65S3

iscN-ChannelMOSFETTransistor

NVB260N65S3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVB260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,Automotive,Easy-drive