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NVBG080N120SC1中文资料Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L数据手册ONSEMI规格书
NVBG080N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Qualified for Automotive According to AEC−Q101
• Automotive Grade
• 1200V rated
• High Speed Switching and Low Capacitance
• 100% UIL Tested
• Devices are RoHS Compliant
应用 Application
• High power DCDC
• Inverter
• Automotive DC/DC converter for EV/PHEV
• Automotive Inverters
技术参数
- 制造商编号
：NVBG080N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Product Preview
- Package Type
：D2PAK7 (TO-263-7L HV)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
询价 | ||
ON(安森美) |
23+ |
12859 |
公司只做原装正品,假一赔十 |
询价 | |||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 |
