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NVBG060N090SC1中文资料Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L数据手册ONSEMI规格书
NVBG060N090SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Typical RDSon
• 60 mΩ
• High Speed Switching and Low Capacitance
• Coss = 115pF
• Qualified for Automotive According to AEC−Q101
• Automotive Grade
• 100% UIL Tested
• Devices are RoHS Compliant
应用 Application
• High power DCDC
• Inverter
• Automotive DC/DC converter for EV/PHEV
• Automotive Inverters
技术参数
- 制造商编号
：NVBG060N090SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：900
- VGS Max (V)
：19
- VGS(th) Max (V)
：4.3
- ID Max (A)
：44
- PD Max (W)
：211
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 10 V(mΩ)
：NA
- Qg Typ @ VGS = 4.5 V (nC)
：NA
- Qg Typ @ VGS = 10 V (nC)
：NA
- Ciss Typ (pF)
：1800
- Package Type
：D2PAK7 (TO-263-7L HV)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
询价 | ||
ON(安森美) |
23+ |
9263 |
公司只做原装正品,假一赔十 |
询价 | |||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 | ||
ON |
24+ |
TO-263-7 |
9600 |
只做原装正品,假一罚十! |
询价 |
