NVBG075N065SC1数据手册ONSEMI中文资料规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

特性 Features

• High Junction Temperature (Tj = 175°C)
• Higher system reliability
• Kelvin Source Configuration
• Low gate noise and switching loss
• Ultra Low Gate Charge (QG(tot) = 59 nC)
• Low switching loss
• Low Output Capacitance (Coss = 109 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Typ. RDS(on) = 56 mΩ
• Low conduction loss
• 650V rated
• 100% UIL Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• Moisture Sensitivity Level 1 guarantee
• Internal Gate Resistance: 5.6 Ω

应用 Application

• Automotive
• DC/DC Converter
• On Board Charger