Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

文件：323.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L

文件：242.3 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Qualified for Automotive According to AEC−Q101\n• Automotive Grade\n• 1200V rated\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Devices are RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

文件：323.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体