Description

NV25010LV, NV25020LV and NV25040LV are EEPROM Serial

1/2/4−Kb SPI Low Voltage Automotive Grade 1 devices internally

organized as 128x8, 256x8 and 512x8 bits. They feature a 16−byte

page write buffer and support the Serial Peripheral Interface (SPI)

protocol. The devices are enabled through a Chip Select (CS) input. In

addition, the required bus signals are clock input (SCK), data input

(SI) and data output (SO) lines. The HOLD input may be used to pause

any serial communication with the NV250x0 device. The device

features software and hardware write protection, including partial as

well as full array protection. Byte Level On−Chip ECC (Error

Correction Code) makes the device suitable for high reliability

applications. The device offers an additional Identification Page which

can be permanently write protected.

Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• 1.7 V to 5.5 V Supply Voltage Range

• 20 / 10 MHz SPI Compatible

• SPI Modes (0,0) & (1,1)

• 16−byte Page Write Buffer

• Self−timed Write Cycle

• Hardware and Software Protection

• Additional Identification Page with Permanent Write Protection

• NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

• Block Write Protection

− Protect 1/4, 1/2 or Entire EEPROM Array

• Low Power CMOS Technology

• Program/Erase Cycles:

− 4,000,000 at 25°C

− 1,200,000 at +85°C

− 600,000 at +125°C

• 200 Year Data Retention

• SOIC, TSSOP, US 8−lead & Wettable Flank UDFN 8−pad Packages

• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant

NV25010DWVLT3G属于集成电路（IC） > 存储器。安森美半导体公司制造生产的NV25010DWVLT3G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。