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PBRN123E

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123E_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123EK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123ES

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123ET

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123Y_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

供应商型号品牌批号封装库存备注价格
NUVOTON/新唐
24+
65200
询价
NUVOTON/新唐
20+
SMD
880000
明嘉莱只做原装正品现货
询价
NUVOTON/新唐
2406+
1850
诚信经营!进口原装!量大价优!
询价
NUVOTON
1
询价
BIFU/QUANYING
两年内
NA
215
实单价格可谈
询价
Korg Nutube
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
AMIS
05/06+
DIP28
1232
全新原装100真实现货供应
询价
AMIS
24+
DIP-28
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
AMIS
23+
DIP28
9280
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
AMIS
6000
面议
19
DIP28
询价
更多NUTINY-SDK-NUC123供应商 更新时间2025-7-16 16:30:00